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论文类型：期刊论文

发表时间：2013-10-01

发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物：SCIE、EI

卷号：16

期号：5,SI

页面范围：1303-1307

ISSN号：1369-8001

关键字：Cu-doped Ga2O3 thin film; X-ray diffraction; Optical bandgap; Amorphous phase; Surface morphology

摘要：Cu-doped Ga2O3 thin films were deposited by electron beam evaporation with subsequent annealing at 1000 degrees C in N-2 and O-2 for 1 h. The influence of the annealing atmosphere on the crystal structure, surface morphology and optical properties of Ga2O3:Cu films was investigated by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and transmittance and photoluminescence (PL) spectroscopy. The optical bandgap deduced from the absorption spectrum was greater for the O-2 annealed than for N-2 annealed samples. In both cases the bandgap was wider than for bulk beta-Ga2O3. The grain size and surface roughness were sensitive to the annealing atmosphere. Results confirmed that the annealed samples were polycrystalline beta-Ga2O3 with some amorphous phase. We hypothesize that annealing in oxygen led to recrystallization of the Ga2O3:Cu film. Annealing treatment improved the crystal quality of Ga2O3:Cu films and the PL intensity of the samples increased. (C) 2013 Elsevier Ltd. All rights reserved.