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个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN electron-blocking layer
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论文类型：期刊论文
发表时间：2013-02-13
发表刊物：JOURNAL OF PHYSICS D-APPLIED PHYSICS
收录刊物：SCIE、EI、Scopus
卷号：46
期号：6
ISSN号：0022-3727
摘要：n-ZnO/p-GaN heterojunction light-emitting diodes (LEDs) with a polarization-induced graded-p-AlxGa1-xN electron-blocking layer (PIEBL) were fabricated. Compared with n-ZnO/p-GaN and n-ZnO/p-Al0.4Ga0.6N/p-GaN LEDs, the PIEBL can effectively block electron injection from ZnO to GaN and promote hole injection from GaN to ZnO. A dominant ZnO-related ultraviolet emission was observed from the edge emission of this device. The mechanism of PIEBL was also discussed in terms of polarization and energy band theory. This study suggests that PIEBL is an excellent electron-blocking layer for ZnO-based LEDs and laser diodes.