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高级工程师

硕士生导师

任职 : 微电子实验教学中心主任

性别:男

毕业院校:大连理工大学

学位:博士

所在单位:集成电路学院

学科:微电子学与固体电子学. 光学工程

办公地点:辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室

联系方式:0411-62273210

电子邮箱:shjiank@dlut.edu.cn

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Concentration effects on the upconversion luminescence in Ho3+/Yb3+ co-doped NaGdTiO4 phosphor

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论文类型:期刊论文

发表时间:2012-08-01

发表刊物:CERAMICS INTERNATIONAL

收录刊物:SCIE、EI

卷号:38

期号:6

页面范围:5045-5051

ISSN号:0272-8842

关键字:Solid-state reaction; Upconversion luminescence; NaGdTiO4; Concentration dependence

摘要:Ho3+/Yb3+ co-doped NaGdTiO4 phosphors were synthesized by a solid-state reaction method. The upconversion (UC) luminescence characteristics excited by 980 nm laser diode were systematically investigated. Bright green UC emission centered at 551 nm accompanied with weak red and near infrared (MR) UC emissions centered at 652 and 761 nm were observed. The dependence of UC emission intensity on excitation power density showed that all of green, red and MR UC emissions are involved in two-photon process. The UC emission mechanisms were discussed in detail. Concentration dependence studies indicated that Ho3+ and Yb3+ concentrations had significant influences on UC luminescence intensity and the intensity ratio of the red UC emission to that of the green one. Rate equations were established based on the possible UC mechanisms and a theoretical formula was proposed to describe the concentration dependent UC emission. The UC luminescence properties of the presented material was evaluated by comparing with commercial NaYF4:Er3+, Yb3+ phosphor, and our sample showed a high luminescence efficiency and good color performance, implying potential applications in a variety of fields. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.