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个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates
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论文类型：期刊论文
发表时间：2012-01-01
发表刊物：CHINESE PHYSICS LETTERS
收录刊物：SCIE、ISTIC、Scopus
卷号：29
期号：1
ISSN号：0256-307X
摘要：GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH4 in a metal organic chemical vapor deposition system. The influence of the SiH4 pre-treatment conditions on the SiC surface is carefully investigated. It is found that SiH4 could react with the SiC surface oxide, which will change the surface termination. Moreover, our experiments demonstrate that SiH4 pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.