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个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
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- [81]梁红伟, 申人升, 柳阳, 夏晓川.Fabrication of High-performance 400 nm Violet Light Emitting Diode[J],CHINESE JOURNAL OF LUMINESCENCE（发光学报）,2022,34(2):225-229
- [82]李香萍, 杜国同, Chen, Baojiu, 申人升, Zhong, Haiyang, 洪承礼, Sun, Jiashi, Zhang, Jinsu, Hua, Tian, Yue.Fluorescence quenching of D-5(J) (J=1, 2 and 3) levels and Judd-Ofelt analysis of Eu3+ in NaGdT...[J],JOURNAL OF PHYSICS D APPLIED PHYSICS,2022,44(33)
- [83]闫卫平, 申人升.Fiber Bragg grating demodulation system based on equi-intensity cantilever beam[A],9th International symposium on measurement Technology and intelligent Instrument(ISMTII-2009),2022
- [84]Li Hong, 闫卫平, 申人升, Wang Benyu.Fiber Bragg Grating Demodulation System Based on Equi-Intensity Cantilever Beam[A],9th International Symposium on Measurement Technology and Intelligent Instruments,2022,437:359-+
- [85]Zhu, Zhifu, 申人升, Zou, Jijun, 杜国同, 张贺秋, 梁红伟, Tang, Bin, Peng, Xincun, Liu, Jianxun, 杨超, 夏晓川, 陶鹏程.High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sap...[J],NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION A ACCELERATORS SP,2022,893:39-42
- [86]Sun, Zhonghao, 黄火林, 申人升, Zhang, Zifeng, Liang, Y. C., 胡礼中.Improved On-Resistance and Breakdown Voltage Vertical GaN-based Field Effect Transistors[A],2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT),2022,1101-1103
- [87]Song, Shiwei, 申人升, 梁红伟, 柳阳, 夏晓川, 张克雄, Yang, Dechao, Wang, Dongsheng, 杜国同.Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,24(9):3299-3302
- [88]Yang, Dechao, 杜国同, 梁红伟, 邱宇, 申人升, 柳阳, 夏晓川, Song, Shiwei, 张克雄, Yu, Zhennan.Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,25(1):267-272
- [89]Li, Chunye, 杜国同, 梁红伟, Zhao, Jianze, 冯秋菊, 边继明, 柳阳, 申人升, Wangcheng, Wu, Guoguang.Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO th...[J],APPLIED SURFACE SCIENCE,2022,256(22):6770-6774
- [90]梁红伟, Cheng Y., Xia X., 刘悦, 申人升, 杨德正, 杜国同.Influence of annealing temperature on the properties of ga2o3: Cu films[A],Nanophotonics, Nanoelectronics and Nanosensor, N3 2013,2022
- [91]Cheng, Yi, 梁红伟, 柳阳, 夏晓川, 申人升, Song, Shiwei, Wu, Yunfeng, 杜国同.Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2022,16(5,SI):1303-1307
- [92]Liu, Yuanda, 夏晓川, 梁红伟, 张赫之, 边继明, 柳阳, 申人升, 骆英民, 杜国同.Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal a...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,23(2):542-545
- [93]Song, Shiwei, 柳阳, 梁红伟, Yang, Dechao, 张克雄, 夏晓川, 申人升, 杜国同.Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ ...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,24(8):2923-2927
- [94]Cai, Xin, 梁红伟, 夏晓川, 申人升, 柳阳, 骆英民, 杜国同.Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MO...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,26(3):1591-1596
- [95]Yang De-Chao, 梁红伟, Song Shi-Wei, 柳阳, 申人升, 骆英民, Zhao Hai-Feng, 杜国同.Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer[J],Chinese Physics Letters,2022,29(8)
- [96]Yang, Dechao, 梁红伟, 邱宇, Song, Shiwei, 柳阳, 申人升, 骆英民, 杜国同.Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growt...[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,24(8):2716-2720
- [97]梁红伟, Chen, Yuanpeng, 夏晓川, 冯秋菊, 柳阳, 申人升, 骆英民, 杜国同.Influence of Sb valency on the conductivity type of Sb-doped ZnO[J],THIN SOLID FILMS,2022,589:199-202
- [98]Liu, Jianxun, 杜国同, 梁红伟, 夏晓川, 柳阳, Jun, Abbas, Qasim, 申人升, 骆英民, Zhang, Yuantao.Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Conte...[J],CRYSTAL GROWTH DESIGN,2022,17(6):3411-3418
- [99]Tian, Yu, 张希珍, Chen, Baojiu, 李香萍, 申人升, Han, Cong, 王新, Xu, Sai, 洪承礼, Sun, Jiashi, Zhang, Jinsu.Laser -induced thermal effect and the role of Nd 3+in Tm 3+/Yb 3+/Nd 3+triply doped LaNbO 4 up ...[J],JOURNAL OF LUMINESCENCE,2022,223
- [100]张克雄, 骆英民, 杜国同, 梁红伟, 柳阳, 申人升, Guo, Wenping, Wang, Dongsheng, 夏晓川, 陶鹏程, 杨超.Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunnelin...[J],Scientific Reports,2022,4:6322