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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：女
毕业院校：大连理工大学
学位：博士
所在单位：物理学院
学科：光学工程. 光学
办公地点：物理与光电工程学院235
联系方式：wpeng@dlut.edu.cn
电子邮箱：wpeng@dlut.edu.cn
Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/SixC1-x/p-Si
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论文类型：期刊论文
发表时间：2014-08-14
发表刊物：JOURNAL OF APPLIED PHYSICS
收录刊物：SCIE、EI、Scopus
卷号：116
期号：6
ISSN号：0021-8979
摘要：Pure SixC1-x (x > 0.5) and B-containing SixC1-x (x > 0.5) based resistive switching devices (RSD) with the structure of Ag/SixC(1-x)/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into SixC1-x, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions. (C) 2014 AIP Publishing LLC.