陈晓明

个人信息Personal Information

教授

博士生导师

硕士生导师

主要任职:光电工程与仪器科学学院副院长

其他任职:Faculty director of Instrumentation Science

性别:男

毕业院校:日本富山大学

学位:博士

所在单位:光电工程与仪器科学学院

学科:微电子学与固体电子学. 测试计量技术及仪器

办公地点:厚望楼 318

联系方式:chen_xm@dlut.edu.cn 0411-84706660

电子邮箱:chen_xm@dlut.edu.cn

扫描关注

论文成果

当前位置: 中文主页 >> 科学研究 >> 论文成果

Influence of lithography distortion due to metal fill on CA

点击次数:

论文类型:会议论文

发表时间:2014-01-18

收录刊物:EI、Scopus

卷号:900

页面范围:651-655

摘要:In the process of integrated circuit design and manufacturing, dummy metal fill can improve the planarity of layout after Chemical Mechanical Polishing (CMP). However, it will also cause lithography distortion and Critical Area (CA) variation. This paper compares and analyzes the influences of lithography distortion due to metal fill on CA from the perspectives of different defect particles based on 45nm technology node. The results indicate that dummy metal fill can increase open CA after lithography and the defect particle with the diameter of 0.066um leads to the largest increment percentage of open CA, which will take up almost 10%. This paper is instructive in researching dummy metal fill and CA or related fields in the future. ? (2014) Trans Tech Publications, Switzerland.