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个人信息Personal Information
教授
博士生导师
硕士生导师
主要任职：光电工程与仪器科学学院副院长
其他任职：Faculty director of Instrumentation Science
性别：男
毕业院校：日本富山大学
学位：博士
所在单位：光电工程与仪器科学学院
学科：微电子学与固体电子学. 测试计量技术及仪器
办公地点：厚望楼 318
联系方式：chen_xm@dlut.edu.cn 0411-84706660
电子邮箱：chen_xm@dlut.edu.cn
In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit
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论文类型：期刊论文
发表时间：2019-06-12
发表刊物：Nano letters
收录刊物：PubMed
卷号：19
期号：6
页面范围：3448-3456
ISSN号：1530-6992
关键字：GaN,bridge,bypass current,gas sensor,nanowire,parasitic deposition
摘要：Direct-bridge growth of aligned GaN nanowires (NWs) over the trench of GaN-coated sapphire substrate was realized in which the issues of parasitic deposition and resultant bypass current were resolved by combining the novel shadowing effect of the deep trench with the surface-passivation effect of the SiO2 coating. Due to the robust connection and the absence of a contact barrier in bridging NWs, the intrinsic sensing properties of the NW itself can be obtained. For the first time, the gas-sensing properties (e.g., NO2) of the bridging GaN NWs were studied. With the assistance of UV light, the detection limit was improved from 4.5 to 0.5 ppb at room temperature, and the corresponding response time was reduced from 518 to 18 s. This kind of sensor is promising for high sensitivity (detection of less than parts per billion), low power consumption (capable of room-temperature operation), high stability (variation in resistance of <0.8% during 240 days), and in situ monolithic integration.