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个人信息Personal Information
教授
博士生导师
硕士生导师
主要任职：光电工程与仪器科学学院副院长
其他任职：Faculty director of Instrumentation Science
性别：男
毕业院校：日本富山大学
学位：博士
所在单位：光电工程与仪器科学学院
学科：微电子学与固体电子学. 测试计量技术及仪器
办公地点：厚望楼 318
联系方式：chen_xm@dlut.edu.cn 0411-84706660
电子邮箱：chen_xm@dlut.edu.cn
AN IMPROVED RULE-BASED DUMMY METAL FILL METHOD FOR 65 NM ASIC DESIGN
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论文类型：期刊论文
发表时间：2013-04-01
发表刊物：JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS
收录刊物：SCIE、EI
卷号：22
期号：4
ISSN号：0218-1266
关键字：Chemical-mechanical polishing (CMP); rule-based fill; DFM; ASIC
摘要：Chemical-mechanical polishing (CMP) is an essential process in deep-submicrometer LSI manufacturing to achieve Chip's planarization. It includes two processes: back-end-of-line (BEOL) and front-end-of-line (FEOL). This paper focuses on the problem of BEOL in 65 nm copper process. Although model-based dummy metal fill has become a tendency recently, the proposed improved rule-based dummy fill is appropriate still. A middle scale design is used for simulation. The metal density, oxide thickness, copper thickness, capacitance variation and variation of layout data size were investigated. The results show that improved rule-based dummy fill and model-based dummy fill have the same planarization, and proposed method has small capacitance variation. The GDS file size of the proposed rule-based fill is less than the model-based fill's.