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论文类型：会议论文

发表时间：2012-03-27

收录刊物：EI、CPCI-S、SCIE、Scopus

卷号：476-478

页面范围：1781-1784

关键字：Electron beam melting; Silicon; Melting angle; Molten pool morphology

摘要：Electron beam melting is an effective method to remove volatile impurities in silicon, during which impurities such as P, Al and Ca etc. can be removed to less than 0.3x10(-4)wt.%. However, so far there is few research on the influence of electron beam parameters, such as beam density and beam size, on molten pool morphology, hence electron beam melting process has not been completely understood, which leads to low energy utilization. In this paper, on the basis of beam size calibration, the influence of beam density and beam size on molten pool morphology is investigated and the concept of melting angle is proposed to characterize molten pool morphology. At the same time, the optimal molten pool morphology for impurities removal and the corresponding electron beam parameters are also analyzed.