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论文类型：会议论文

发表时间：2010-06-26

收录刊物：EI、CPCI-S、Scopus

卷号：675-677

页面范围：53-56

关键字：silicon; directional solidification; solidification rate; segregation; purification

摘要：In this paper, the structure and composition of multicrystalline silicon ingots prepared by directional solidification with different pulling rates were analyzed to investigate the effect of pulling rate on the multicrystalline silicon ingot. The results showed that the lower pulling rate will make the site taking place constitutional supercooling move to the upper part of ingots and make the high purity area become larger. Lowering the pulling rate will decrease the impurity effective segregation coefficient and the solid-liquid interface curvature.