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论文类型：期刊论文

发表时间：2013-10-01

发表刊物：VACUUM

收录刊物：SCIE、EI

卷号：96

页面范围：27-31

ISSN号：0042-207X

关键字：Electron beam melting; Silicon; Aluminum; Evaporation; Segregation

摘要：The purification of metallurgical grade silicon, especially the removal of aluminum, was investigated by electron beam melting and solidification. Small amounts of silicon raw materials were melted in an electron beam furnace with same melting time and different solidification time to obtain the distribution of Al in silicon ingot. The removal mechanisms in different stages were also discussed. The results show that the removal of Al during melting process only depends on evaporation and that during solidification process depends on both segregation and evaporation. The distribution of Al shows an obvious increasing trend from the bottom to the top of the silicon ingot when solidification time is 600 s. The removal efficiency in most area is close to that in the ingot solidified instantaneously, but the energy consumption is less, which is considered to be an effective way for the purification of silicon. (c) 2013 Elsevier Ltd. All rights reserved.