点击次数：

论文类型：期刊论文

发表时间：2012-06-01

发表刊物：JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE

收录刊物：SCIE、EI

卷号：21

期号：6

页面范围：854-858

ISSN号：1059-9495

关键字：directional solidification; resistivity; silicon; solid-liquid interface

摘要：The effects of impurities on the resistivity distribution and polarity of multicrystalline silicon ingot prepared by directional solidification were investigated in this article. The shape of the equivalence line of the resistivity in the vertical and cross sections was determined by the solid-liquid interface. Along the solidification height of silicon ingot, the conductive type changed from p-type in the lower part of the silicon ingot to n-type in the upper part of the silicon ingot. The resistivity in the vertical section of the silicon ingot initially increased along the height of the solidified part, and reached its maximum at the polarity transition position, then decreased rapidly along the height of solidified part and approached zero on the top of the ingot because of the accumulation of impurities. The variation of resistivity in the vertical section of the ingot has been proven to be deeply relevant to the distribution of Al, B, and P in the growth direction of solidification.