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论文类型：期刊论文

发表时间：2011-11-01

发表刊物：MATERIALS RESEARCH INNOVATIONS

收录刊物：Scopus、SCIE、EI

卷号：15

期号：6

页面范围：406-409

ISSN号：1432-8917

关键字：Electron beam; Phosphorus; Molten silicon; Evaporation coefficient; Solar grade silicon

摘要：A new method, electron beam candle melting (EBCM), is proposed for the removal of P in molten Si, to produce high quality material such as solar grade silicon for photovoltaic applications. EBCM is designed to overcome the shortcomings of electron beam melting while utilising the high saturated pressure of P in molten Si to effect refining. The experimental result showed that it could remove P from Si effectively; in addition, the energy utilisation ratio was experimentally proved to be high. The evaporation coefficient of P removal is in a reasonable region and comparable with the theoretical value, which indicates that EBCM is a feasible method for the removal of P in molten Si in low power.