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Indexed by:会议论文

Date of Publication:2011-10-19

Included Journals:EI、Scopus

Volume:148-149

Page Number:947-950

Abstract:Multi-crystalline silicon ingot was prepared by directional solidification method using metallurgical grade silicon as raw materials. The influence of impurities and crystalline defects in mc-Si on the minority carrier lifetime and resistivity was investigated. The results indicate that both grain boundary and impurities play important roles in the deterioration of the minority carrier lifetime. ? (2012) Trans Tech Publications, Switzerland.