Current position: Home >> Scientific Research >> Paper Publications

Control of the Thermal Field of S/L Interface Front and Crystal Growth of Mono-Like Crystalline Silicon Assisted by Direct Current

Release Time:2025-01-02  Hits:

Indexed by: Journal Papers

Document Code: 373575

Date of Publication: 2024-01-21

Journal: SILICON

Volume: 16

Issue: 1

Page Number: 35-43

ISSN: 1876-990X

Key Words: DESIGN; DISLOCATION; HIGH-EFFICIENCY; IMPURITIES; INGOT; MC-SI; MULTICRYSTALLINE SILICON; PHOTOVOLTAIC APPLICATION; REDUCTION; SOLIDIFICATION

Prev One:Thermal shock behavior and oxidation resistance of novel SiC nanowires+Si/Yb2Si2O7-Si/Yb2Si2O7 environmental barrier coatings

Next One:Continuous recycling of diamond wire sawing silicon powder - electron beam melting coupled with continuous feeding technology