location: Current position: Home >> Scientific Research >> Paper Publications

A novel method to optimize the growth of crystal silicon-Current assisted directional solidification

Hits:

Journal:JOURNAL OF CRYSTAL GROWTH

Volume:617

ISSN No.:0022-0248

Key Words:GRAIN-BOUNDARY GROOVES; INTERFACE; SEGREGATION

Pre One:Recycling Si in waste crystalline silicon photovoltaic panels after mechanical crushing by electrostatic separation

Next One:Effect of metal impurities concentration on electrical properties in N-type Recharged-Czochralski silicon