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Indexed by:期刊论文

Date of Publication:2018-08-01

Journal:ACTA MATERIALIA

Included Journals:SCIE

Volume:154

Page Number:190-198

ISSN No.:1359-6454

Key Words:Hafnium oxide; Ferroelectric; Antiferroelectric; Endurance; Phase transition

Abstract:Hafnium oxide based ferroelectric (FE) and antiferroelectric (AFE) thin films show great potentials in memory and energy related applications, while their successes in commercially available devices depend strongly on detailed characterization and deep understanding of the endurance properties of the materials. In this work, the bipolar field cycling behavior has been investigated in detail for FE and AFE-like Si-doped HfO2 films. Their apparent differences in fatigue and breakdown resistance are interpreted by the modified switching-induced charge-injection model. Referring to the first-order phase transition theory, we summarize and predict the evolution of polarization switching characteristic for FE, AFE-like and AFE Si-doped HfO2 thin films stressed with bipolar field cycling. Additionally, several approaches are suggested to improve the endurance properties of ferroelectric HfO2-based thin films in terms of fabrication process and material design. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.