Release Time:2022-08-30  Hits:

Date of Publication: 2014-01-01

Journal: 功能材料

Issue: 16

Page Number: 16111-16115

ISSN: 1001-9731

Abstract: To meet the stringent demands of increasing capacitance density for various devices on microelectronic IC chips,it was necessary to develop new controllable techniques to deposit ultra-thin HfO2 high-k dielectric films with a thickness less than 10 nm.In this work,HfOCl2 ,HNO3 ,and H2 O2 were used as main raw mate-rials to prepare pure water-based solution precursor diluted with water.HfO2 films were produced via spin-coat-ing on silicon substrate cleaned with plasma.Film thickness,surface morphology and composition were investi-gated using X-ray reflectivity,AFM and XPS.The results show that this unique sol-gel approach enables con-venient preparation of smooth,dense,and stoichiometric HfO2 nano-films with a growth rate less than 1 nm/cycle.

Note: 新增回溯数据