Temperature-Dependent Subcycling Behavior of Si-Doped HfO2 Ferroelectric Thin Films
Release Time:2024-04-29 Hits:
Date of Publication: 2022-10-03
Journal: ACS APPLIED ELECTRONIC MATERIALS
Volume: 3
Issue: 5
Page Number: 2415-2422
Key Words: "hafnium oxide; subcycling; oxygen vacancies; bias fields; temperature dependence"