Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-11-04

Journal: APPLIED PHYSICS LETTERS

Included Journals: Scopus、EI、SCIE

Volume: 103

Issue: 19

ISSN: 0003-6951

Abstract: Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up. (C) 2013 AIP Publishing LLC.