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PZT厚膜的电射流沉积研究

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Indexed by:期刊论文

Date of Publication:2016-02-20

Journal:传感器与微系统

Included Journals:CSCD

Volume:35

Issue:2

Page Number:19-22

ISSN No.:1000-9787

Key Words:锆钛酸铅;厚膜;电射流沉积

Abstract:制备了锆钛酸铅( PZT)悬浮液,采用电射流沉积( EJD)技术,在硅衬底上沉积了PZT厚膜.研究了电射流沉积高度、流量及悬浮液混合条件对厚膜致密性的影响.结果表明:降低电射流沉积高度和流量有助于提高沉积PZT厚膜致密性;采用球磨方法充分混合PZT悬浮液,沉积的PZT厚膜致密性明显提高.采用优化的电射流沉积参数和球磨20 h的PZT悬浮液,制备了10μm无裂纹PZT厚膜,其压电常数d33为67 pC·N-1 ,相对介电常数εr 为255.

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