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Indexed by:期刊论文

Date of Publication:2017-04-01

Journal:OPTICAL MATERIALS EXPRESS

Included Journals:SCIE、EI、Scopus

Volume:7

Issue:4

Page Number:1281-1288

ISSN No.:2159-3930

Abstract:Arsenic doped p-type ZnO films are prepared by the photo-assisted metal organic chemical vapor deposition method. Using the photo-assisted technique, the acceptor activation process is simplified. The arsenic doping level, which decides the carrier distribution, could be controlled by changing the thickness of the pre-deposited GaAs layer. The crystal and optical quality of the ZnO films is good. The acceptor is As-Zn-2V(Zn). Its ionization energy could be slightly reduced by increasing the arsenic doping level. This finding is very helpful to improve the hole concentration. Our experiments provide a new method to grow high performance p-type ZnO based photoelectric devices. (C) 2017 Optical Society of America