Release Time:2019-03-12  Hits:

Indexed by: Journal Article

Date of Publication: 2017-04-01

Journal: OPTICAL MATERIALS EXPRESS

Included Journals: Scopus、EI、SCIE

Volume: 7

Issue: 4

Page Number: 1281-1288

ISSN: 2159-3930

Abstract: Arsenic doped p-type ZnO films are prepared by the photo-assisted metal organic chemical vapor deposition method. Using the photo-assisted technique, the acceptor activation process is simplified. The arsenic doping level, which decides the carrier distribution, could be controlled by changing the thickness of the pre-deposited GaAs layer. The crystal and optical quality of the ZnO films is good. The acceptor is As-Zn-2V(Zn). Its ionization energy could be slightly reduced by increasing the arsenic doping level. This finding is very helpful to improve the hole concentration. Our experiments provide a new method to grow high performance p-type ZnO based photoelectric devices. (C) 2017 Optical Society of America