Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2012-01-01

Journal: OPTICAL MATERIALS EXPRESS

Included Journals: EI、SCIE、Scopus

Volume: 2

Issue: 1

Page Number: 38-44

ISSN: 2159-3930

Abstract: The authors report on the fabrication of p-Mg(0.1)Zn(0.9)O/n-GaN light emitting diodes (LEDs). Under forward bias, dominant ultraviolet (UV) electroluminescence is detected within 360-380 nm caused by near band edge (NBE) radiative recombination from both n-GaN and p-Mg(0.1)Zn(0.9)O. It is worth noting that the intensity ratio of UV-NBE/visible-DLE reaches up to 50, which indicates the potential applications of this structure in the short wavelength LEDs. (C) 2011 Optical Society of America