期刊论文

Xia, Xiaochuan

Xia, XC (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China.

Zhang, Baolin,Du, Guotong,Shen, Rensheng,Liu, Yuanda,Yang, Dechao,Song, Shiwei,Zhao, Long,Shi, Zhifeng,Li, Xiangping,Liang, Hongwei

2012-01-01

OPTICAL MATERIALS EXPRESS

Scopus、SCIE、EI

J

2

1

38-44

2159-3930

The authors report on the fabrication of p-Mg(0.1)Zn(0.9)O/n-GaN light emitting diodes (LEDs). Under forward bias, dominant ultraviolet (UV) electroluminescence is detected within 360-380 nm caused by near band edge (NBE) radiative recombination from both n-GaN and p-Mg(0.1)Zn(0.9)O. It is worth noting that the intensity ratio of UV-NBE/visible-DLE reaches up to 50, which indicates the potential applications of this structure in the short wavelength LEDs. (C) 2011 Optical Society of America