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Indexed by:期刊论文

Date of Publication:2011-08-01

Journal:JOURNAL OF LUMINESCENCE

Included Journals:SCIE、EI

Volume:131

Issue:8

Page Number:1645-1648

ISSN No.:0022-2313

Key Words:Metal-organic chemical vapor deposition; MgZnO; Electroluminescence

Abstract:ZnO-based heterojunction light emitting diodes (LEDs) with MgZnO barrier layer had been fabricated on the p-Si substrate by metal-organic chemical vapor deposition (MOCVD) technology. The current-voltage (I-V) characteristics exhibited a typical p-n diode behavior. Both ultraviolet (UV) and visible emissions could be detected in the electroluminescence (EL) measurement. The result was compared with the EL spectrum of n-ZnO/p-Si heterojunction LED without MgZnO barrier layer. An improved light extraction efficiency by about 31% was realized owing to the current-blocking effect of MgZnO layer. The result indicated that MgZnO barrier layer can prevent the electrons as expected and realize electron-hole recombination in ZnO layer effectively. (C) 2011 Elsevier B.V. All rights reserved.