Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2011-08-01

Journal: JOURNAL OF LUMINESCENCE

Included Journals: EI、SCIE

Volume: 131

Issue: 8

Page Number: 1645-1648

ISSN: 0022-2313

Key Words: Metal-organic chemical vapor deposition; MgZnO; Electroluminescence

Abstract: ZnO-based heterojunction light emitting diodes (LEDs) with MgZnO barrier layer had been fabricated on the p-Si substrate by metal-organic chemical vapor deposition (MOCVD) technology. The current-voltage (I-V) characteristics exhibited a typical p-n diode behavior. Both ultraviolet (UV) and visible emissions could be detected in the electroluminescence (EL) measurement. The result was compared with the EL spectrum of n-ZnO/p-Si heterojunction LED without MgZnO barrier layer. An improved light extraction efficiency by about 31% was realized owing to the current-blocking effect of MgZnO layer. The result indicated that MgZnO barrier layer can prevent the electrons as expected and realize electron-hole recombination in ZnO layer effectively. (C) 2011 Elsevier B.V. All rights reserved.