Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2011-02-01

Journal: JOURNAL OF LUMINESCENCE

Included Journals: EI、SCIE

Volume: 131

Issue: 2

Page Number: 280-284

ISSN: 0022-2313

Key Words: ZnO; MOCVD; Electrical property

Abstract: ZnO film was firstly prepared by PA-MOCVD method on the substrate pre-coated with GaAs interlayer Hall measurement found that the GaAs interlayer had important effects on the electrical behavior of the ZnO film It could make the ZnO film convert to p-type conductivity The XPS results confirmed that the acceptor was arsenic And the acceptor level was 130 meV above the ZnO valence band maximum Low-temperature PL measurement was introduced to investigate the optical properties of both as-grown n-type and arsenic doped p-type ZnO films Then based on this technology ZnO homojunction light emitting device (LED) was fabricated with arsenic doped p-type ZnO and unintentionally doped n-type ZnO on GaAs/p(+)-Si substrate Its current-voltage (I-V) character showed a typical rectification behavior which was different from the n-ZnO/p(+)-Si structure The UV-visible (385-580 nm) electroluminescence was detected under relatively low current injection condition from the n-ZnO/p-ZnO/p(+)-Si LED (C) 2010 Elsevier B V All rights reserved