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在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜

Release Time:2019-03-09  Hits:

First Author: 夏晓川

Disigner of the Invention: 胡礼中,梁红伟,申人升,柳阳

Authorization Number: ZL.201310401102.X

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