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一种基于SiC衬底的垂直结构GaN基紫外LED及其制备方法

Release Time:2019-10-11  Hits:

First Author: 梁红伟

Disigner of the Invention: 夏晓川,申人升,杜国同,柳阳

Application Number: CN201410006227.7

Authorization Date: 2014-01-07

Authorization Number: CN103730549A

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