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一种用于高质量氧化物半导体材料制备的MOCVD加热盘

Release Time:2019-10-11  Hits:

First Author: 柳阳

Disigner of the Invention: 陈远鹏,申人升,夏晓川,梁红伟

Application Number: CN201710261163.9

Authorization Date: 2017-04-21

Authorization Number: CN107083541A

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