Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2015-01-01

Included Journals: Scopus、EI

Volume: 817

Page Number: 379-384

Abstract: Purification of metallurgical-grade silicon (MG CSi) by a combination of Al-Si solidification refining and electromagnetic oscillating separation and acid leaching collection has been studied. The primary Si crystals and Al-Si alloy in hypereutectic Al-30%Si melt were separated during solidification under the pulse electromagnetic field (PEF). The results show that the Si content in Si-rich layer increases with increasing discharging frequency. The typical metallic impurities (Fe, Ti, and Ca) have removal fraction higher than 99.5%. The removal fractions of the impurities B and P which are more difficult to remove are over 90% and 85%, respectively. ? (2015) Trans Tech Publications, Switzerland.