Indexed by:会议论文

Date of Publication:2017-05-20

Included Journals:SCIE、Scopus、EI、CPCI-S

Volume:207

Issue:1

Abstract:Experiment has proved that the rate of impurity removal depends on the pressure and the temperature of the vacuum chamber during using electron beam to smelt silicon, and the amount of removed-impurity depends on time when other conditions are the same. In the actual production process, smelting time is a decisive factor of impurity removal amount while pressure and temperature of the vacuum chamber is certain due to a certain melting power. To avoiding the influence of human control and improving the quality of production, thinking of using cooling water temperature to estimate the state of material during metal smelting is considered. We try to use the change of cooling water temperature to judge that when silicon is all melted and to evaluate the effectiveness of this method.