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Indexed by:Journal Papers
Document Code:373575
Date of Publication:2024-01-21
Journal:SILICON
Volume:16
Issue:1
Page Number:35-43
ISSN:1876-990X
Key Words:DESIGN; DISLOCATION; HIGH-EFFICIENCY; IMPURITIES; INGOT; MC-SI; MULTICRYSTALLINE SILICON; PHOTOVOLTAIC APPLICATION; REDUCTION; SOLIDIFICATION