Indexed by:Journal Article

Date of Publication:2014-02-01

Journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Included Journals:EI、SCIE

Volume:18

Issue:1

Page Number:42-45

ISSN:1369-8001

Key Words:Electron beam injection; Silicon; Solar energy materials; Boron; Thin films

Abstract:A new method for boron removal from silicon using electron beam injection (EBI) is proposed. After thermal oxidation on monocrystalline silicon (100) wafer at 1000 degrees C for 1 h, EBI was used to induce thermal and negative charging effects to enhance boron diffusion in the oxide film and the silicon substrate. This facilitates boron removal from the silicon substrate. The boron concentration in samples was measured by secondary ion mass spectrometry. The results show that EBI reduced the boron concentration in the silicon substrate by 4.83%. (C) 2013 Elsevier Ltd. All rights reserved.