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DALIAN UNIVERSITY OF TECHNOLOGY Login 中文
姜大川

Associate Professor
Supervisor of Master's Candidates


Title : 中国产学研合作促进会常务理事
Gender:Male
Alma Mater:大连理工大学
Degree:Doctoral Degree
School/Department:材料科学与工程学院
Discipline:Materials Science
Business Address:新三束实验室209
Contact Information:0411-84709784
E-Mail:jdc@dlut.edu.cn
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Current position: Home >> Scientific Research >> Paper Publications

Study on the removal process of phosphorus from silicon by electron beam melting

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Indexed by:期刊论文

Date of Publication:2013-07-01

Journal:VACUUM

Included Journals:SCIE、EI

Volume:93

Page Number:65-70

ISSN No.:0042-207X

Key Words:Electron beam melting; Evaporation rate; Phosphorus; Silicon; Energy consumption

Abstract:According to the traditional metallurgical theory, the evaporation process of phosphorus and silicon during silicon refining by electron beam melting (EBM) is discussed and a theoretical model is established to obtain the loss rate of silicon, the removal efficiency of phosphorus and the corresponding energy consumption. The results show that phosphorus can be removed from silicon melt efficiently and quickly by EBM. There is a one-to-one correspondence between the loss of silicon and the removal efficiency of phosphorus, indicating that they have obvious effect on each other, whereas the EB power has little influence on the loss rate of silicon. If the EB power is increased from 9 kW to 21 kW, the melting time can be shortened by 68%, the loss of silicon increased by only 0.1% and the energy consumption decreased by 25%. Based on the theoretical and experimental results, a high-power EBM method is considered to be a better way for the removal of phosphorus with high efficiency and low energy consumption under such experiment conditions. (C) 2013 Elsevier Ltd. All rights reserved.