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Research on the Influence of Electron Beam Parameters on Molten Pool Morphologies during Electron Beam Melting Silicon
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论文类型: 会议论文
发表时间: 2012-03-27
收录刊物: EI、CPCI-S、SCIE、Scopus
卷号: 476-478
页面范围: 1781-1784
关键字: Electron beam melting; Silicon; Melting angle; Molten pool morphology
摘要: Electron beam melting is an effective method to remove volatile impurities in silicon, during which impurities such as P, Al and Ca etc. can be removed to less than 0.3x10(-4)wt.%. However, so far there is few research on the influence of electron beam parameters, such as beam density and beam size, on molten pool morphology, hence electron beam melting process has not been completely understood, which leads to low energy utilization. In this paper, on the basis of beam size calibration, the influence of beam density and beam size on molten pool morphology is investigated and the concept of melting angle is proposed to characterize molten pool morphology. At the same time, the optimal molten pool morphology for impurities removal and the corresponding electron beam parameters are also analyzed.

姜大川

副教授   硕士生导师

任职 : 中国产学研合作促进会常务理事

性别: 男

毕业院校:大连理工大学

学位: 博士

所在单位:材料科学与工程学院

学科:材料学

办公地点: 新三束实验室209

联系方式:0411-84709784

电子邮箱:jdc@dlut.edu.cn

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