- SiC sedimentation and carbon migration in mc-Si by election beam melting with slow cooling pattern
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- 论文类型： 期刊论文
- 发表时间： 2016-10-01
- 发表刊物： MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- 收录刊物： SCIE、EI、Scopus
- 卷号： 53
- 页面范围： 1-7
- ISSN号： 1369-8001
- 关键字： Silicon carbide; Silicon; Solar energy material; Electron beam melting
- 摘要： The development of photovoltaic industry demands great amount of multicrystalline silicon. Carbon and SiC in silicon need to be contained in a limited amount since they can cause great adverse affect to solar cells. The behavior of carbon and its precipitation SiC in silicon by electron beam melting(EBM) witha slow cooling pattern was investigated in this study. SiC is found to sedimentate to ingot bottom after EBM. The presence of Si3N4 can be heterogeneous nucleation agent for SiC to nucleate continually and both of them precipitate to the ingot bottom. The comprehensive effect of slow solidification condition, temperature gradient and melt convection causes the sedimentation of SiC. It is also found that oxygen plays an important role on the migration of the dissolved carbon. The formation of carbon-oxygen complexes tend to migrate to ingot top since oxygen can transfer from silicon melt to vacuum environment during EBM. (C) 2016 Elsevier Ltd. All rights reserved.
