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Removal of aluminum from silicon by electron beam melting with exponential decreasing power
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论文类型: 期刊论文
发表时间: 2015-09-25
发表刊物: SEPARATION AND PURIFICATION TECHNOLOGY
收录刊物: SCIE、EI、Scopus
卷号: 152
页面范围: 32-36
ISSN号: 1383-5866
关键字: Silicon; Purification; Electron beam melting; Directional solidification; Aluminum removal
摘要: Aluminum is one of the main impurities in silicon, which can be separated and eliminated by electron beam melting. However, high removal efficiency can be obtained only by increasing melt temperature or extending refining time, resulting in high energy consumption. In this work, the directional solidification of silicon was achieved by electron beam with exponential decreasing power, considering that aluminum has both characteristics of segregation and evaporation. The distributions of aluminum show increasing trend from the bottom to the top of the electron beam melted silicon ingot, which is the same as that after traditional directional solidification. The removal efficiency is improved by the coupling of segregation and evaporation. Compared with traditional electron beam melting, the loss of silicon reduced by more than 52% and the energy consumption reduced by more than 54%. This method is more effective to remove aluminum from silicon with low energy consumption. (C) 2015 Elsevier B.V. All rights reserved.

姜大川

副教授   硕士生导师

任职 : 中国产学研合作促进会常务理事

性别: 男

毕业院校:大连理工大学

学位: 博士

所在单位:材料科学与工程学院

学科:材料学

办公地点: 新三束实验室209

联系方式:0411-84709784

电子邮箱:jdc@dlut.edu.cn

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