- Study on the removal process of phosphorus from silicon by electron beam melting
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- 论文类型： 期刊论文
- 发表时间： 2013-07-01
- 发表刊物： VACUUM
- 收录刊物： SCIE、EI
- 卷号： 93
- 页面范围： 65-70
- ISSN号： 0042-207X
- 关键字： Electron beam melting; Evaporation rate; Phosphorus; Silicon; Energy consumption
- 摘要： According to the traditional metallurgical theory, the evaporation process of phosphorus and silicon during silicon refining by electron beam melting (EBM) is discussed and a theoretical model is established to obtain the loss rate of silicon, the removal efficiency of phosphorus and the corresponding energy consumption. The results show that phosphorus can be removed from silicon melt efficiently and quickly by EBM. There is a one-to-one correspondence between the loss of silicon and the removal efficiency of phosphorus, indicating that they have obvious effect on each other, whereas the EB power has little influence on the loss rate of silicon. If the EB power is increased from 9 kW to 21 kW, the melting time can be shortened by 68%, the loss of silicon increased by only 0.1% and the energy consumption decreased by 25%. Based on the theoretical and experimental results, a high-power EBM method is considered to be a better way for the removal of phosphorus with high efficiency and low energy consumption under such experiment conditions. (C) 2013 Elsevier Ltd. All rights reserved.
