Improving the purity of multicrystalline silicon by using directional solidification method
Release Time:2019-03-11 Hits:
Indexed by: Conference Paper
Date of Publication: 2017-06-23
Included Journals: EI
Volume: 911 MSF
Page Number: 51-55
Abstract: Large temperature gradient was introduced to improve the removal rate of metal impurity in silicon ingot during direction solidification. The concentration of metal impurities in the silicon ingot with a large temperature gradient is 0.96 ppmw. The solidification time is reduced by 20% due to the fast speed of crystal growth improved; meanwhile the purity is increased by 64%. © 2018 Trans Tech Publications, Switzerland.