Current position: Home >> Scientific Research >> Paper Publications

Effect of melt flow rate and S/L interface on the P horizontal distribution in silicon

Release Time:2022-10-03  Hits:

Date of Publication: 2022-10-02

Journal: VACUUM

Institution: 材料科学与工程学院

Volume: 190

ISSN: 0042-207X

Key Words: "Melt flow; Solid-liquid interface; n-type silicon; Doping control"

Prev One:Effects of Co-Doped B and Al on the Improvement of Electrical Properties of Ga and P Contaminated Upgraded Metallurgical-Grade Silicon Materials

Next One:Effect of melt superheat treatment on solidification behavior and microstructure of new Ni-Co based superalloy