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论文类型：期刊论文

发表时间：2018-02-01

发表刊物：MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物：SCIE、EI

卷号：74

页面范围：218-224

ISSN号：1369-8001

关键字：Silicon carbide; Silicon; Solar energy materials; Metallurgy

摘要：A new method for SiC elimination from multicrystalline silicon with Al addition by using the chemical reaction between Al and SiC is conducted in this study. Inclusion-free region is obtained when Al addition content increases to 5.4% and 7.9%. SiC particles tend to pile up around Al during the process and precipitate at ingot bottom. Furthermore, Al-Si alloying occurs at the inclusion-free region. The electron probe micro analysis mapping illustrates the existence of carbon in the precipitated Al which indicates the occurrence of chemical reaction between SiC particles and Al during the process. The results can be an effective way to eliminate SiC for silicon scraps recycling.