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论文类型：期刊论文

发表时间：2015-11-01

发表刊物：VACUUM

收录刊物：EI、SCIE、ISTIC、Scopus

卷号：121

页面范围：207-211

ISSN号：0042-207X

关键字：Silicon; Carbides; Melting; Solar cells; Electron beam

摘要：The behavior of carbon in multicrystalline silicon scraps by electron beam melting was investigated in this study. It was found that the process favors nucleation of SiC on Si3N4. Furthermore, carbon tends to gather to top surface of the ingots with increasing melting time, and the reaction between oxygen and carbon favors carbon migration. The melt convection and temperature gradient caused by electron beam are employed to be the dominate reason the phenomenon occurs. The results can provide guidance in silicon recycling. (C) 2015 Elsevier Ltd. All rights reserved.