论文名称：Achieving n- and p-type thermoelectric materials with the identical chemical composition BiSbTe 1.5 Se 1.5 by defect structure engineering
发表刊物：CHEMICAL ENGINEERING JOURNAL
卷号：494
ISSN号：1385-8947
关键字：ANTIMONY TELLURIDE; ELECTRON LOCALIZATION; ENHANCEMENT; FIGURE; MERIT; NANOSTRUCTURES; PERFORMANCE; SB2SE3; SNSE; THIN-FILMS
发表时间：2024-09-06