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发布时间：2021-06-17

论文类型：期刊论文

发表时间：2021-01-10

发表刊物：CERAMICS INTERNATIONAL

卷号：46

期号：14

页面范围：22550-22556

ISSN号：0272-8842

关键字：Yttrium doped HfO2; Ferroelectrics; Thin films; Annealing protection atmosphere

摘要：The 10 nm thick yttrium doped hafnium oxide (Y:HfO2) thin films, prepared by chemical solution deposition which using all-inorganic aqueous salt reagents, were fabricated on Si (100) substrates. The crystalline structure, chemical composition and ferroelectric properties of thin films, annealed in protection atmosphere of Air, Ar and N-2, were examined. Result showed that the crystalline structure and ferroelectric properties of films exhibited a strong annealing protection atmosphere dependence. When compared to annealing protection atmosphere of Air and Ar, the films with the N-2 exhibited lowest m-phase fraction of 19.4%, and the highest oxygen vacancy percentage content of 3.06%, accompanied with the highest relative permittivity of 50.9 and the remanent polarization of 14.6 mu C/cm(2). These excellent ferroelectric properties were correlated with asymmetric orthorhombic phase and the concentration of oxygen vacancy introduced from the nitrogen doping concentration.