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Links to published journals:http://ieeexplore.ieee.org/abstract/document/6804693/keywords

Date of Publication:2015-04-06

Journal:IEEE TRANSACTIONS ON POWER ELECTRONICS

Included Journals:SCI、EI

Discipline:Engineering

First-Level Discipline:Mechanical Engineering

Volume:30

Issue:3

Page Number:1535-1543

Key Words:Temperature measurement, Insulated gate bipolar transistors, Fatigue, Current measurement, Heating,

Abstract:This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12