Release Time:2017-03-29  Hits:

Links to Published Journals: http://ieeexplore.ieee.org/abstract/document/6804693/keywords

Date of Publication: 2015-04-06

Journal: IEEE TRANSACTIONS ON POWER ELECTRONICS

Included Journals: EI、SCI

Discipline: Engineering

First-Level Discipline: Mechanical Engineering

Volume: 30

Issue: 3

Page Number: 1535-1543

Key Words: Temperature measurement, Insulated gate bipolar transistors, Fatigue, Current measurement, Heating,

Abstract: This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12