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Grafting Ti Sites on Defective Silicalite-1 via TiCl4 Chemical Vapor Deposition for Gas-Phase Epoxidation of Propylene and H2O2 Vapor
Indexed by:Journal Papers
Date of Publication:2021-05-20
Journal:INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
Volume:59
Issue:7
Page Number:2828-2838
ISSN No.:0888-5885
Abstract:The gas-phase epoxidation of propylene and hydrogen peroxide (H2O2) vapor to produce propylene oxide (G-HPPO) is a good way to bypass the methanol solvent problem faced by the liquid-phase HPPO process. In order to quell the decomposition of H2O2 while promoting the epoxidation of propylene with H2O2 at a high temperature (e.g., 140 degrees C) condition generally needed for G-HPPO, an attempt of grafting Ti atoms onto a defective silicalite-1 (S-1) zeolite via the chemical vapor deposition (CVD) of TiCl4 was made as an unconventional route to reach a better catalyst than the hydrothermally synthesized TS-1 zeolite. Results show that the defective S-1 zeolite properly treated with TiCl4 CVD method attained 1.20 kg(PO).h(-1).kg(catal)(-1) PO productivity together with 64.62% H2O2 utility at a molar ratio of propylene to H2O2 about 4. These encouraging results highlight the potential of titanium silicalite innovation for the gas-phase epoxidation of propylene with H(2)O(2 )vapor.