|
个人信息Personal Information
教授
博士生导师
硕士生导师
主要任职：大连理工大学莱斯特国际学院副院长
性别：男
毕业院校：波鸿大学
学位：博士
所在单位：化工学院
学科：应用化学. 精细化工
办公地点：大连理工大学西部校区精细化工国家重点实验室E段521
联系方式：+86-411-84986487
电子邮箱：jinxuan.liu@dlut.edu.cn
Highly transparent nickel and iron sulfide on nitrogen-doped carbon films as counter electrodes for bifacial quantum dot sensitized solar cells
点击次数：
论文类型：期刊论文
发表时间：2019-11-15
发表刊物：SOLAR ENERGY
收录刊物：EI、SCIE
卷号：193
页面范围：766-773
ISSN号：0038-092X
关键字：Metal sulfide; Nitrogen doped C film; Quantum dot-sensitized solar cells; Counter electrode
摘要：Semiconductors are widely used as counter electrodes in quantum dot-sensitized solar cells. However, many counter electrode materials have poor conductivity and require tedious post-treatment procedures. Here, our groups develop a highly transparent MS2@N-doped C film materials (M = Ni, Fe) derived from layer-by-layer self-assembly of a M-TCPP film as a counter electrode in bifacial CdS/CdSe quantum dot-sensitized solar cells. Devices based on the MS2@N-doped C films exhibited higher respective front- and reverse-side power conversion efficiencies (i.e., 4.57% and 3.98% for the NiS2@N-doped C film and 3.18% and 2.63% for the FeS2@N-doped C film) than those of Pt-based devices (2.39% and 1.74%). We attribute the outstanding catalytic activity and excellent stability of the MS2@N-doped C film materials to the homogeneous sulfides within the transparent nitrogen-doped C film, as confirmed by electrochemical analyses, including cycle voltammetry, impedance spectroscopy and Tafel-polarization measurements.