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Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films
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发布时间: 2019-11-04
发布时间:2019-11-04
论文类型:期刊论文
发表时间:2019-10-21
发表刊物:JOURNAL OF APPLIED PHYSICS
收录刊物:SCIE、EI
卷号:126
期号:15
ISSN号:0021-8979
摘要:Ferroelectricity in calcium doped hafnium oxide (Ca:HfO2) thin films has been experimentally proved for the first time in this work. All films prepared by chemical solution deposition exhibited smooth and crack-free surfaces, which were observed using an atomic force microscope. After 10(4) field cycling, a maximum remanent polarization of 10.5 mu C/cm(2) was achieved in HfO2 films with 4.8 mol. % Ca content. Meanwhile, the breakdown of the film occurred after 7 x 10(6) electric cycles. A phase transition from the monoclinic phase to cubic/orthorhombic phases was observed with increasing Ca concentration. We suggest the change in oxygen vacancy concentration as the origin of phase evolution, which was confirmed by X-ray photoelectron spectroscopy analysis. These results open a new pathway for realizing ferroelectricity in HfO2-based films. Published under license by AIP Publishing.

赵秀明

工程师

性别: 女

毕业院校:大连理工大学

学位: 博士

所在单位:化工海洋与生命学院

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