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论文类型：期刊论文

发表时间：2010-06-01

发表刊物：MATERIALS AND MANUFACTURING PROCESSES

收录刊物：SCIE、EI、Scopus

卷号：25

期号：6

页面范围：418-423

ISSN号：1042-6914

关键字：CdZnTe wafer; Chemical mechanical polishing; Soft-brittle crystal; Ultrarecision grinding

摘要：Ultraprecision grinding by a #6000 diamond grinding wheel on soft-brittle Cd0.96Zn0.04Te (111) crystals was conducted, and ultrasmooth machined surface was achieved. The ground surface of Cd0.96Zn0.04Te (111) was compared with that of lapping and chemical mechanical polishing (CMP). The experimental results show that the surface roughness, Ra, and machining duration by ultraprecision grinding and CMP are 4.985nm, 1.478nm, and 35min, 135min, respectively, thus ultraprecision grinding exhibits high-efficiency and ultraprecision characters. The ground surface is smooth, uniform, microcrack and imbedding-free, while the machined surface by CMP appears free abrasive imbedding at local micro-area, leading to the decrease of surface integrity.