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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Influence of radical power on the electrical and optical properties of ZnO:N films grown by metal-organic chemical vapor deposition with N2O plasma doping source
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论文类型：期刊论文
发表时间：2012-10-30
发表刊物：3rd International Conference on Microelectronics and Plasma Technology (ICMAP)
收录刊物：SCIE、EI、CPCI-S、Scopus
卷号：521
页面范围：253-256
ISSN号：0040-6090
关键字：Zinc oxide; Thin film; Metal-organic chemical vapor deposition (MOCVD); Photoluminescence
摘要：N-doped ZnO (ZnO:N) films are grown by a low-pressure plasma assisted metal-organic chemical vapor deposition system on insulating Si (111) substrate. N2O plasma is used as the N precursor of ZnO:N films, which is activated by a radio frequency generator. The influence of activating power on the properties of ZnO films is studied by means of X-ray diffraction, Hall effect, X-ray photoelectron spectroscopy and low temperature photoluminescence measurements. P-type ZnO:N films with acceptable electrical and optical properties are achieved under the optimal activating power conditions. XPS study reveals a competition between acceptor N-O and donor (N-2)(O) during doping influence the properties of ZnO films. (C) 2011 Elsevier B. V. All rights reserved.